• DocumentCode
    1911577
  • Title

    Impact of die-to-die thermal coupling on the electrical characteristics of 3D stacked SRAM cache

  • Author

    Chatterjee, Subho ; Cho, Minki ; Rao, Rahul ; Mukhopadhyay, Saibal

  • Author_Institution
    Sch. of ECE, Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2012
  • fDate
    18-22 March 2012
  • Firstpage
    14
  • Lastpage
    19
  • Abstract
    We study the thermal coupling in a 3D stack with multiple cores in one tier and an SRAM array (cache) in a second tier with face-to-back bonding. For identical statistical distribution of power dissipation in cores, the SRAM sub-arrays experience much higher mean and variance in temperature in a 3D stack compared to a conventional 2D system. The increased variability in temperature increases leakage, degrades performance, and accelerates aging in 3D integrated SRAM. This is studied using 32nm predictive technology. Further, the spatial and temporal variations in performance of SRAM blocks become a strong function of the power variations in cores.
  • Keywords
    SRAM chips; bonding processes; cache storage; thermal management (packaging); 3D integrated SRAM; 3D stacked SRAM cache; SRAM sub-arrays; aging; die-to-die thermal coupling; electrical characteristics; face-to-back bonding; power dissipation; size 32 nm; Computational modeling; Heating; Performance evaluation; Random access memory; Reliability; Spatiotemporal phenomena; Three dimensional displays; 3D; SRAM; performance; thermal coupling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2012 28th Annual IEEE
  • Conference_Location
    San Jose, CA
  • ISSN
    1065-2221
  • Print_ISBN
    978-1-4673-1110-6
  • Electronic_ISBN
    1065-2221
  • Type

    conf

  • DOI
    10.1109/STHERM.2012.6188820
  • Filename
    6188820