DocumentCode
1911577
Title
Impact of die-to-die thermal coupling on the electrical characteristics of 3D stacked SRAM cache
Author
Chatterjee, Subho ; Cho, Minki ; Rao, Rahul ; Mukhopadhyay, Saibal
Author_Institution
Sch. of ECE, Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2012
fDate
18-22 March 2012
Firstpage
14
Lastpage
19
Abstract
We study the thermal coupling in a 3D stack with multiple cores in one tier and an SRAM array (cache) in a second tier with face-to-back bonding. For identical statistical distribution of power dissipation in cores, the SRAM sub-arrays experience much higher mean and variance in temperature in a 3D stack compared to a conventional 2D system. The increased variability in temperature increases leakage, degrades performance, and accelerates aging in 3D integrated SRAM. This is studied using 32nm predictive technology. Further, the spatial and temporal variations in performance of SRAM blocks become a strong function of the power variations in cores.
Keywords
SRAM chips; bonding processes; cache storage; thermal management (packaging); 3D integrated SRAM; 3D stacked SRAM cache; SRAM sub-arrays; aging; die-to-die thermal coupling; electrical characteristics; face-to-back bonding; power dissipation; size 32 nm; Computational modeling; Heating; Performance evaluation; Random access memory; Reliability; Spatiotemporal phenomena; Three dimensional displays; 3D; SRAM; performance; thermal coupling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2012 28th Annual IEEE
Conference_Location
San Jose, CA
ISSN
1065-2221
Print_ISBN
978-1-4673-1110-6
Electronic_ISBN
1065-2221
Type
conf
DOI
10.1109/STHERM.2012.6188820
Filename
6188820
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