Record power-added efficiency using GaAs on insulator MESFET technology

Author

Jenkins, T. ; Kehias, L. ; Parikh, P. ; Ibbetson, J. ; Mishra, U. ; Docter, D. ; Minh Le ; Kiziloglu, K. ; Grider, D. ; Pusl, J.

Author_Institution

Air Force Res. Lab., Sensors Directorate, Wright-Patterson AFB, OH, USA

fYear

1998

fDate

1-4 Nov. 1998

Firstpage

259

Lastpage

262

Abstract

Record power-added efficiency (PAE) of 89% was obtained at 8 GHz with a gain of 9.6 dB using GaAs on insulator (GOI) MESFETs, which were operated using a 3 V supply. When the voltage was increased to 4 V, the peak PAE was 93% at 210 mW/mm with 9.2 dB gain. The ideal current-voltage characteristics with practically zero leakage current and large transconductance near pinch-off yielded PAE values approaching the theoretical limits of over-driven operation.

Keywords

III-V semiconductors; gallium arsenide; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device measurement; semiconductor technology; semiconductor-insulator boundaries; 3 to 4 V; 8 GHz; 89 to 93 percent; 9.2 to 9.6 dB; GOI MESFETs; GaAs on insulator MESFET technology; GaAs-Al/sub 2/O/sub 3/; PAE values; X-band devices; current-voltage characteristics; ideal I-V characteristics; leakage current; power characterisation; power-added efficiency; transconductance; Buffer layers; Gallium arsenide; Insulation; Laboratories; MESFETs; Oxidation; Phased arrays; Protection; Space technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

Conference_Location

Atlanta, GA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5049-9

Type

conf

DOI

10.1109/GAAS.1998.722695

Filename

722695