Title :
An analytical model of current-splitting in CMOS-compatible lateral bipolar transistors
Author :
Freund, D. ; Kloes, A. ; Kostka, A.
Author_Institution :
Solid State Electron. Lab., TH Darmstadt, Darmstadt, Germany
Abstract :
The use of CMOS-compatible lateral bipolar transistors in various applications makes it necessary to be able to estimate the splitting of the collector currents by means of an analytical model. In this paper, we present such an analytical 2D-model that was derived using conformal mapping techniques. It allows for the geometry-dependent calculation of vertical and lateral currents including their dependance on collector voltage. The model can be extended to realistic 3D-structures.
Keywords :
MOSFET; bipolar transistors; conformal mapping; geometry; CMOS-compatible lateral bipolar transistor; analytical 2D-model; collector voltage; conformal mapping technique; currents collector splitting estimation; geometry-dependent calculation; lateral current; vertical current; Analytical models; Bipolar transistors; Circuit synthesis; Geometry; Laboratories; Numerical simulation; Solid modeling; Solid state circuits; State estimation; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
