Title :
Si-Ge power amplifier for WCDMA handheld applications
Author :
Kitlinski, Krzysztof ; Donig, Günter ; Kapfelsperge, Boris ; Weigel, Robert
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
A monolithic radiofrequency power amplifier for WCDMA handheld applications has been fabricated in a 0.35 μm, 40 GHz fT, volume production Si-Ge bipolar technology. The process technology features a doped ground connection for on-chip devices to improve the overall performance. At 3.3 V supply voltage saturated output power of 29 dBm with a PAE of 50 % has been achieved; simultaneously P-1dB is 28 dBm at 1.95 GHz and the small signal gain is 32 dB.
Keywords :
Ge-Si alloys; millimetre wave power amplifiers; mobile handsets; 0.35 micron; 1.95 GHz; 3.3 V; 32 dB; 40 GHz; Si-Ge; Si-Ge power amplifier; WCDMA; bipolar technology; doped ground connection; handheld applications; monolithic radiofrequency power amplifier; on-chip devices; Circuit simulation; Circuit synthesis; Equivalent circuits; Frequency; Impedance matching; Inductors; Multiaccess communication; Network-on-a-chip; Power amplifiers; Power generation;
Conference_Titel :
Microwaves, Radar and Wireless Communications, 2004. MIKON-2004. 15th International Conference on
Print_ISBN :
83-906662-7-8
DOI :
10.1109/MIKON.2004.1356946
