Title :
Physical Modelling of Dopant Diffusion: A Key Point for Deep Submicron CMOS Process Simulation
Author_Institution :
C.N.E.T.-CNS, France Telecom, Meylan, France
Abstract :
In this paper we review some recent advances made in the field of dopant diffusion modelling in the various materials related with Si CMOS technology. After some information on diffusion in polycrystalline Si, SiO2, and silicides, we develop in more details the case of single crystal Si. A physical model able to handle the interactions between the diffusing dopant and the point defects is briefly described. Some particular points where more modelling efforts are necessary are also reported.
Keywords :
CMOS integrated circuits; elemental semiconductors; semiconductor device models; semiconductor doping; silicon; Si; deep submicron CMOS process simulation; dopant diffusion; physical modelling; point defects; polycrystalline silicon; silicides; silicon CMOS technology; silicon oxide; CMOS process; CMOS technology; Circuit simulation; Computational modeling; Crystalline materials; Electric variables; Grain boundaries; Impurities; Semiconductor device modeling; Semiconductor process modeling;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
