High Concentration Boron Diffusion Study Using A Complete Point Defect And Dynamic Nucleation Model

The diffusion and activation of boron at high concentrations are key problems in designing ultra-shallow P⁺ junctions. In this paper, the behavior of boron diffusion after high dose ion implantation is analysed using the theory of nucleation. For the first time, a dynamic nucleation formulation is included in a complete point defect diffusion model together with ion implantation damage. This allows to analyse the transient behavior of the precipitated phase and the electrical activation above solubility limit.