DocumentCode :
1912591
Title :
Identification of thermal and electrical time constants in SOIMOSFETS from small signal measurements
Author :
Tenbroek, B.M. ; Redman-White, W. ; Uren, M.J. ; Lee, M.S.L. ; Ward, M.C.L.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., Southampton, UK
fYear :
1993
fDate :
13-16 Sept. 1993
Firstpage :
189
Lastpage :
192
Abstract :
This paper describes the use of small-signal drain admittance measurements to characterise the dynamic behaviour of SOI MOSFETS. The techniques are used to identify clearly and quantify the electrical and thermal internal feedback mechanisms which give rise to anomalous time and frequency domain behaviour.
Keywords :
MOSFET; electric admittance measurement; feedback; frequency-domain analysis; semiconductor device measurement; silicon-on-insulator; SOI MOSFET; anomalous time behaviour; dynamic behaviour characterization; electrical internal feedback mechanism; electrical time constant identification; frequency domain behaviour; small-signal drain admittance measurement; thermal internal feedback mechanism; thermal time constant identification; Admittance; Electric resistance; Electric variables measurement; Feedback; Frequency; Immune system; MOSFETs; Signal processing; Thermal resistance; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
Print_ISBN :
2863321358
Type :
conf
Filename :
5435489
Link To Document :
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