DocumentCode
1912641
Title
Physical Properties of Silicon CMOS Devices Operated between Liquid Helium and Room Temperature
Author
Rais, K. ; Hafez, L.M. ; Emrani, A. ; Balestra, F. ; Ghibaudo, G. ; Haond, M.
Author_Institution
LPCS/ENSERG, Grenoble, France
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
193
Lastpage
196
Abstract
The main problems which arise in Si CMOS devices while operated at low temperature are investigated. More specifically, the mobility modelling, the influence of impurity freeze-out on LDD resistance, the impact ionization substrate current, the Gate Induced Drain Leakage (GIDL) phenomenon are investigated over a wide range of temperatures (42-300 K).
Keywords
CMOS integrated circuits; elemental semiconductors; impact ionisation; semiconductor device models; silicon; LDD resistance; gate induced drain leakage; impact ionization substrate current; impurity freeze-out; liquid helium; mobility modelling; physical properties; room temperature; silicon CMOS devices; temperature 4.2 K to 300 K; Electric resistance; Helium; Impact ionization; Impurities; MOS devices; Semiconductor device modeling; Silicon; Temperature distribution; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435490
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