Title :
P mono-/p polysilicon layer: Separation of influences on electron transport and their processing dependences
Author :
Hu, Bailin ; Berger, Horst H.
Author_Institution :
Inst. of Microelectron., Tech. Univ. of Berlin, Berlin, Germany
Abstract :
A new procedure is described to separate the minority carrier current through the monosilicon/interface/polysilicon structure according to the various mechanisms. These mechanisms are then related to various processing conditions for process optimization. For the first time a significant effect of the monosilicon doping on the interface recombination has been identified.
Keywords :
current density; minority carriers; semiconductor device testing; semiconductor doping; electron transport; interface recombination; minority carrier current; monosilicon doping; monosilicon-interface-polysilicon structure; polysilicon layer; Annealing; Boron; Diodes; Doping; Electrons; MONOS devices; Microelectronics; Testing; Transistors; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
