DocumentCode :
1912989
Title :
Microwave plasachemical etching of silicon plate with different crystallographic orientation
Author :
Kozhevnikov, A.V. ; Shanigin, V.Ya. ; Yafarov, R.K.
Author_Institution :
Saratov Dept., Inst. of Radioengineering & Electron. of RAS, Saratov
fYear :
2008
fDate :
24-25 Sept. 2008
Firstpage :
83
Lastpage :
89
Abstract :
Regularity of influence regimes and chemical composition of high ionization microwave plasma on etching rate and surface micromorphology monocrystal silicon with different crystallographic orientation are investigated.
Keywords :
crystallography; sputter etching; surface morphology; chemical composition; crystallographic orientation; high ionization microwave plasma; microwave plasma chemical etching; silicon plate; surface micromorphology monocrystal silicon; Chemicals; Crystallography; Etching; Plasma applications; Plasma chemistry; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Actual Problems of Electron Devices Engineering, 2008. APEDE '08. International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4244-2121-3
Electronic_ISBN :
978-1-4244-2122-0
Type :
conf
DOI :
10.1109/APEDE.2008.4720116
Filename :
4720116
Link To Document :
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