DocumentCode :
1913450
Title :
Use of Electrothermal Simulation to Analyze Thermal Breakdown on N+/P/P+ Diode During ESD Pulse
Author :
Buj, C. ; Leroux, C. ; Chante, J-P.
Author_Institution :
CENG, LETI (CEA Technol. Av.), Grenoble, France
fYear :
1993
fDate :
13-16 Sept. 1993
Firstpage :
347
Lastpage :
350
Abstract :
Electrothermal simulators are efficient tools to study Electrostatic Discharge (ESD) problems. We use the numerical 2D simulator TMA-MEDICI [1] to simulate electrothermal problems. We propose here an analysis of thermal breakdown occurrence observed on a PIN diode under reverse ESD pulse. Experimental studies and analytical models have already been proposed [2,3,4]. Nevertheless, simulations coupled with experimental results allowed the study of the failure mode evolution. This new approach led to a better understanding of the main physical mechanisms involved in thermal breakdown phenomenon.
Keywords :
electrostatic discharge; p-i-n diodes; ESD pulse; PIN diode; TMA MEDICI; electrostatic discharge problems; electrothermal simulation; failure mode evolution; thermal breakdown; Analytical models; Biological system modeling; Current supplies; Electric breakdown; Electrostatic discharge; Electrothermal effects; Epitaxial layers; Light emitting diodes; Space charge; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
Print_ISBN :
2863321358
Type :
conf
Filename :
5435519
Link To Document :
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