Title :
Optimization of a submicron HIMOS Flash E2PROM cell for implementation in a virtual ground array configuration
Author :
Van Houdt, J. ; Wellekens, D. ; Haspeslagh, L. ; Deferm, L. ; Groeseneken, Guido ; Maes, H.E.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
This paper describes the implementation of High Injection MOS Flash E2PROM devices in a 0.7μm CMOS technology. The cell has been optimized from the point of view of cell area as well as programming speed. A virtual ground array configuration is proposed to scale the cell area down to the range of 15μm2. The device is programmed in a few hundreds of nanoseconds at 5V-only operation and in 100μs at 3.3V-only operation. The combination of these results with a low development entry cost shows that the HIMOS cell is a viable candidate for fast-programmable 5V- only (and 3.3V-only) medium-to-high density Flash memories.
Keywords :
CMOS memory circuits; flash memories; CMOS technology; fast-programmable medium-to-high density flash memory; optimization; size 0.7 mum; submicron HIMOS flash E2PROM cell device; submicron high injection MOS flash E2PROM cell device; time 100 mus; virtual ground array configuration; voltage 3.3 V; voltage 5 V; CMOS technology; Character generation; Charge transfer; Costs; Dielectrics; Flash memory; Nanoscale devices; Secondary generated hot electron injection; Split gate flash memory cells; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
