مرکز منطقه ای اطلاع رساني علوم و فناوري - Simulation of Base Current Evolution in C-In doped GaInP/GaAs HBT Under Current Induced Stress

DocumentCode :

1913808

Title :

Simulation of Base Current Evolution in C-In doped GaInP/GaAs HBT Under Current Induced Stress

Author :

Maneux, C. ; Labat, N. ; Touboul, A. ; Danto, Y. ; Delage, S.L. ; Cassette, S.

Author_Institution :

Universite de Bordeaux I, Talence Cedex, France

fYear :

1998

fDate :

8-10 Sept. 1998

Firstpage :

220

Lastpage :

223

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location :

Bordeaux, France

Print_ISBN :

2-86332-234-6

Type :

conf

Filename :

1503528

Link To Document :