Title :
A composite gate turn-off thyristor model and its application
Author :
He, Xiangning ; Williams, B.W. ; Green, T.C.
Author_Institution :
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Riccarton, Edinburgh, UK
Abstract :
The authors present a composite gate turn-off thyristor model, which is based on the combination of the p-n-p and n-p-n transistor models. PSPICE simulations and parametric sensitivity analysis are performed with the composite model, and calculated results are given. Results show that it corresponds statically and dynamically with the practical device and, in particular, at turn-off. The model, together with a MOSFET model on the gate, has been applied to a MOS controlled thyristor. The simulated results for this model are also presented
Keywords :
SPICE; digital simulation; insulated gate field effect transistors; power transistors; semiconductor device models; sensitivity analysis; thyristor applications; MOS controlled thyristor; MOSFET model; PSPICE simulations; composite gate turn-off thyristor model; n-p-n transistor models; p-n-p transistor models; parametric sensitivity analysis; Analytical models; Circuit simulation; Equations; MOSFETs; P-n junctions; Performance analysis; Power electronics; Resistors; Switches; Thyristors;
Conference_Titel :
Industry Applications Society Annual Meeting, 1993., Conference Record of the 1993 IEEE
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-1462-X
DOI :
10.1109/IAS.1993.299050
