Title :
Numerical investigation of leakage current of Schottky contacts on InAlAs/InGaAs/InP heterostructures
Author :
Ellrodt, P. ; Brockerhoff, W. ; Heedt, C. ; Tegude, F.J.
Author_Institution :
Solid State Electron. Dept., Duisburg Univ., Duisburg, Germany
Abstract :
The leakage current of Schottky contacts on the heterosystem InAlAs/InGaAs is investigated by use of an one dimensional model which considers a tunneling component and a current caused by thermionic emission contributing to the leakage current. A detailed analysis of the influence of the layer structure and other parameters on the leakage current with regard to heterostructure FET (HFET) applications is presented in this paper.
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; leakage currents; semiconductor heterojunctions; InAlAs-InGaAs; Schottky contacts; heterostructures; leakage current; numerical investigation; thermionic emission; tunneling component; FETs; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Leakage current; MODFETs; Schottky barriers; Thermionic emission; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
