Title :
Thermal Simulation of High Power Transistors and MIC and a New Flip-Chip Technology
Author :
Vorobiev, A.A. ; Galdetskiy, A.V. ; Ippolitov, V.M.
Author_Institution :
FSUE "Istok", Moscow
Abstract :
The results of thermal simulation of high power microwave transistor are presented. It is shown that the main part of thermal resistance is determined by GaAs crystal. The new design of the transistor and mounting technology are presented which allow to enhance transistor thermal resistance, to increase the chip thickness and decrease its dimensions.
Keywords :
III-V semiconductors; flip-chip devices; gallium arsenide; microwave transistors; thermal resistance; flip-chip technology; high power microwave transistors; mounting technology; thermal simulation; transistor thermal resistance; Gallium arsenide; HEMTs; MESFETs; Microwave integrated circuits; Power transistors; Temperature distribution;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368628
