Title :
X-band MMIC Low-Noise Amplifier Based on 0.15 μm GaAs Phemt Technology
Author :
Mokerov, V.G. ; Gunter, V.Ya. ; Arzhanov, S.N. ; Fedorov, Yu.V. ; Scherbakova, M.Yu. ; Babak, L.I. ; Barov, A.A. ; Cherkashin, M.V. ; Sheherman, F.I.
Author_Institution :
RAS Moscow, Moscow
Abstract :
The design and fabrication of X-band MMIC low-noise amplifier (LNA) based on 0.15 μm GaAs pHEMT technology is presented. The design and fabrication of X-band MMIC LNA is presented. MMIC is implemented with 0.15 mum pHEMT GaAs technology developed in the Institute of Microwave Semiconductor Electronics (Russia). Two-stage LNA is designed with using "visual" design CAD tools. In 7-10 GHz, it provides power gain G = 15.5 -17 dB, noise figure from 2.1 to 2.9 dB, input and output return losses from -8 to -12 dB, and linear output power of +6 dBm.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; circuit CAD; gallium arsenide; low noise amplifiers; GaAs; MMIC low-noise amplifiers; X-band; circuit CAD; frequency 7 GHz to 10 GHz; gain 15.5 dB to 17 dB; noise figure 2.1 dB to 2.9 dB; pHEMT technology; size 0.15 mum; Gain measurement; Gallium arsenide; Low-noise amplifiers; MMICs; PHEMTs; Probes;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368632
