Title :
Characterization of Semiconductor Device Structures with Ultrathin Layers by Raman Scattering
Author :
Mintairov, A. ; Smekalin, K.
Author_Institution :
Ioffe Phys. Tech. Inst., St. Petersburg, Russia
Abstract :
In this paper, the authors show that Raman spectroscopy can provide useful more detailed information on composition of mixed crystals, carrier concentration and mobility and depth profiles of ultrathin crystalline films and multilayer structures. It can serve for investigation of layers with thicknesses of tens of angstroms in a multilayer structure. As a proof , the authors used AlGaAs compound and AlGaAs/GaAs structures. The method can be extended to other semiconductor compounds.
Keywords :
III-V semiconductors; Raman spectra; Raman spectroscopy; aluminium compounds; carrier density; carrier mobility; gallium arsenide; semiconductor devices; spectrochemical analysis; AlGaAs; AlGaAs-GaAs; Raman scattering; Raman spectroscopy; carrier concentration; depth profiles; mixed crystal; mobility; multilayer structures; semiconductor device structure characterization; ultrathin crystalline films; ultrathin layer; Crystallization; Frequency; Nonhomogeneous media; Optical films; Optical scattering; Phonons; Raman scattering; Semiconductor device measurement; Semiconductor devices; Surface emitting lasers;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
