Title :
Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation
Author :
Khandelwal, S. ; Chauhan, Y.S. ; Karim, M.A. ; Venugopalan, S. ; Sachid, A. ; Niknejad, A. ; Hu, C.
Author_Institution :
Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Trondheim, Norway
Abstract :
We present an efficient approach to model the effects of vertical non-uniform doping in bulk MOSFETs. The impact of vertical non-uniform doping on device characteristics is analyzed through systematic TCAD simulations. The qualitative nature of the observed effects is also confirmed by the experimental data available in the literature. A modeling methodology for these effects is developed on BSIM6 model framework. The proposed model is in good agreement with the TCAD simulations.
Keywords :
MOSFET; circuit simulation; semiconductor device models; semiconductor doping; technology CAD (electronics); BSIM6 model framework; bulk MOSFET; circuit simulation; device characteristics; modeling methodology; systematic TCAD simulation; vertical nonuniform doping; Computational modeling; Doping profiles; Integrated circuit modeling; MOSFETs; Mathematical model; Semiconductor process modeling; BSIM6; Body Bias Effect; Compact Models; Vertical Non-uniform Doping;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4577-1116-9
Electronic_ISBN :
978-1-4577-1115-2
DOI :
10.1109/ICCDCS.2012.6188935
