DocumentCode :
1914671
Title :
Transistor Large-Signal Scattering Parameters and Application in Microwave Circuit Design
Author :
Babak, L.I. ; Kondratenko, A.V.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk
fYear :
2007
fDate :
10-14 Sept. 2007
Firstpage :
105
Lastpage :
106
Abstract :
A new definition of transistor large-signal scattering parameters for prescribed source and load impedances is introduced. These parameters provide the exact design of nonlinear microwave circuits. In the paper, a new definition of transistor large-signal scattering parameters for prescribed source and load impedances is introduced. These parameters relate increments of the first harmonics of incident and reflected waves at transistor ports with respect to steady-state operation. A way to calculate scattering parameters using PSPICE simulator is proposed. It is demonstrated that new parameters provide the exact design of microwave power amplifiers and oscillators.
Keywords :
SPICE; electric impedance; electromagnetic wave scattering; harmonic analysis; microwave circuits; microwave power amplifiers; transistors; PSPICE simulator; harmonics; load impedance; microwave power amplifier; microwave power oscillator; nonlinear microwave circuit; reflected waves; transistor large-signal scattering parameter; transistor port; Circuit simulation; Circuit synthesis; Impedance; Microwave amplifiers; Microwave circuits; Microwave transistors; Power amplifiers; SPICE; Scattering parameters; Steady-state;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
Type :
conf
DOI :
10.1109/CRMICO.2007.4368645
Filename :
4368645
Link To Document :
بازگشت