مرکز منطقه ای اطلاع رساني علوم و فناوري - Experiments with gate oxide scaling from 4.5nm down to 2.5nm for boosting CMOS performances

DocumentCode :

1914800

Title :

Experiments with gate oxide scaling from 4.5nm down to 2.5nm for boosting CMOS performances

Author :

Josse, E. ; Gowziecki, R. ; Alieu, J. ; Mourrain, C. ; Havond, D. ; Halimaoui, A. ; Martin, F. ; Skotnicki, T.

Author_Institution :

France Telecom, Meylan, France

fYear :

1998

fDate :

8-10 Sept. 1998

Firstpage :

364

Lastpage :

367

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location :

Bordeaux, France

Print_ISBN :

2-86332-234-6

Type :

conf

Filename :

1503564

Link To Document :