Accurate MOS Transistor Modeling and Parameter Extraction Valid up to 10 GHz

Author

Jen, Steve H. ; Enz, Christian ; Pehlke, David R. ; Schroter, Michael ; Sheu, Bing J.

Author_Institution

Univ. of Southern California, Los Angeles, United States

fYear

1998

fDate

8-10 Sept. 1998

Firstpage

484

Lastpage

487

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location

Bordeaux, France

Print_ISBN

2-86332-234-6

Type

Filename

1503594

Link To Document