Ultra low noise Q-band monolithic amplifiers using InP- and GaAs-based 0.1 /spl mu/m HEMT technologies

Author

Aust, M.V. ; Huang, T.W. ; DuFault, M. ; Wang, H. ; Lo, D.C.W. ; Lai, R. ; Biedenbender, M. ; Yang, C.C.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1996

fDate

17-19 June 1996

Firstpage

89

Lastpage

92

Abstract

Design and development of ultra low noise MMIC Q-band LNAs using both InP- and GaAs-based 0.1 /spl mu/m HEMT technologies with state-of-the-art noise figures are reported in this paper. For InAlAs-InGaAs-InP HEMT LNAs, we have achieved noise figure performance as low as 1.6 dB with 10 dB associated gain for a one-stage LNA. With a two stage design, 20 dB gain with 1.8 dB noise figure was obtained. Single- and multistage MMIC LNAs were also designed and fabricated using a production 0.1 /spl mu/m AlGaAs-InGaAs-GaAs HEMT process. A four-stage LNA also demonstrated 2.5 dB noise figure with 28 dB gain, which is the best MMIC LNA result ever reported for on GaAs-based HEMTs.

Keywords

HEMT integrated circuits; MMIC amplifiers; field effect MIMIC; integrated circuit noise; millimetre wave amplifiers; 0.1 micron; 1.6 to 2.5 dB; 10 to 28 dB; AlGaAs-InGaAs-GaAs; EHF; GaAs; HEMT technologies; InAlAs-InGaAs-InP; InP; LNAs; MIMIC; MM-wave amplifiers; Q-band monolithic amplifiers; four-stage design; multistage MMIC LNAs; noise figure performance; one-stage design; two-stage design; ultra low noise amplifiers; Frequency; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; Millimeter wave communication; Noise figure; Performance gain; Production; Sensor arrays;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-3360-8

Type

conf

DOI

10.1109/MCS.1996.506310

Filename

506310