Title :
Charge transport and nature of traps in implanted silicon nitride
Author :
Gritsenko, V.A. ; Morokov, Yu.N. ; Xu, B. ; Pridachin, N.B. ; Kalinin, V.V. ; Ng, A.C. ; Lau, L.W.M. ; Kwok, R.W.M.
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
The authors study the charge transport in ion implanted Si3 N4 and aim to understand the charge transport mechanism and the nature of defects responsible for the charge transport. They find that the charge transport is described by thermally assisted tunneling with trap energy in the range of 2.2 eV
Keywords :
dielectric thin films; electrical conductivity; electron traps; hole traps; ion implantation; silicon compounds; tunnelling; Si3N4; electron traps; hole traps; implanted silicon nitride; thermally assisted tunneling; trap energy; Charge carrier processes; Chemical technology; Chemistry; Dielectric devices; Electron traps; Physics; Radiative recombination; Silicon; Spontaneous emission; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
Conference_Location :
Shatin
Print_ISBN :
0-7803-5648-9
DOI :
10.1109/HKEDM.1999.836409
