Title :
Overvoltage Protection with a CMOS-Compatible BJT
Author :
Schrom, G. ; Selberherr, S. ; Unterleitner, F. ; Trontelj, J. ; Kunc, V.
Author_Institution :
Inst. for Microelectron., Tech. Univ. of Vienna, Vienna, Austria
Abstract :
A new method of overvoltage protection in the supply path of CMOS circuits is described. The central device of the protection circuit is a CMOS-compatible npn bipolar transistor (BJT) which uses no n+ buried layer and can be manufactured in a simple p-well CMOS process without additional process steps. The device is especially suitable for high-voltage applications in electrically hostile environments such as automotive circuits.
Keywords :
CMOS integrated circuits; bipolar transistors; buried layers; overvoltage protection; power supply circuits; CMOS circuits; CMOS-compatible BJT; CMOS-compatible npn bipolar transistor; automotive circuits; central device; electrically hostile environments; high-voltage applications; n+ buried layer; overvoltage protection; p-well CMOS process; protection circuit; supply path; Bipolar transistors; CMOS process; Doping profiles; Laboratories; Microelectronics; Protection; Pulse circuits; Regulators; Resistors; Voltage control;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
