Title :
A technique for deriving noise-parameters of millimeter-wave low-noise HEMTs and its application to MMIC LNA design
Author :
Yoshinaga, H. ; Kashiwabara, Y. ; Abe, B. ; Shibata, K.
Author_Institution :
Komukai Works, Toshiba Corp., Kawasaki, Japan
Abstract :
An on-wafer tuning method has been applied to derive noise parameters of pseudomorphic HEMTs measured at W-band and K-band. As an application of the method, a K-band MMIC LNA with 1.6 dB NF and greater than 32 dB gain has been successfully developed.
Keywords :
HEMT integrated circuits; MMIC amplifiers; S-parameters; circuit tuning; electric noise measurement; equivalent circuits; field effect MIMIC; high electron mobility transistors; integrated circuit noise; integrated circuit testing; millimetre wave field effect transistors; millimetre wave measurement; semiconductor device noise; semiconductor device testing; 1.6 dB; 19 to 21 GHz; 30 to 94 GHz; 32 dB; EHF; K-band; MMIC LNA design; PHEMTs; SHF; W-band; low-noise HEMTs; millimeter-wave HEMTs; noise parameters; onwafer tuning method; pseudomorphic HEMT; Circuit noise; Equivalent circuits; Frequency; HEMTs; Impedance; K-band; MODFETs; Millimeter wave technology; Noise measurement; Probes;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3360-8
DOI :
10.1109/MCS.1996.506324
