DocumentCode :
1916634
Title :
High efficiency X-Ku band MMIC power amplifiers
Author :
Cardullo, M. ; Page, C. ; Teeter, D. ; Platzker, A.
Author_Institution :
Motorola Inc., Phoenix, AZ, USA
fYear :
1996
fDate :
17-19 June 1996
Firstpage :
163
Lastpage :
166
Abstract :
MMIC power amplifiers with 3.5 W nominal output power and 49.5% peak power added efficiency over the 8-14 GHz band are described. Efficiency in excess of 40% is obtained over much of the band. The amplifiers utilize Raytheon´s power PHEMT technology. Details of the device performance, circuit design, and evaluation are given. The results presented represent state of the art performance for MMIC circuits over X-Ku band.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; power amplifiers; 3.5 W; 49.5 percent; 8 to 14 GHz; MMIC power amplifiers; Raytheon; SHF; X-Ku band; high efficiency design; power PHEMT technology; pseudomorphic HEMT; Broadband amplifiers; Circuits; Gain; High power amplifiers; Impedance matching; MMICs; Microwave devices; PHEMTs; Power amplifiers; Power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3360-8
Type :
conf
DOI :
10.1109/MCS.1996.506327
Filename :
506327
Link To Document :
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