DocumentCode :
1916878
Title :
FeRAM Technology
Author :
Mazuré, C.
Author_Institution :
Infineon Technologies, Germany
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
64
Lastpage :
67
Keywords :
CMOS process; CMOS technology; Capacitors; Electrodes; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Plugs; Random access memory; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194719
Filename :
1503649
Link To Document :
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