Title :
Degradation of Si MOSFET Gate Oxides by Ion Implantation
Author :
Ponomarev, Y.V. ; Stolk, P.A. ; Dachs, C.J.J. ; Woerlee, P.H.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
fDate :
11-13 September 2000
Keywords :
Annealing; Boron; Degradation; Dielectric losses; Doping; Energy exchange; Implants; Ion implantation; Lead compounds; MOSFET circuits;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194731
