Title :
A Comparison of Implant Enhanced Dopant Diffusion in Bulk and SOI Material
Author :
Crowder, S.W. ; Griffin, P.B. ; Plummer, J.D.
Author_Institution :
Applied Electronics Lab 001, Stanford University, Stanford, CA 94305-4055
Keywords :
Bonding; Boron; Doping profiles; Etching; Implants; Predictive models; Rapid thermal annealing; Semiconductor process modeling; Silicon on insulator technology; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
