Title :
Physically Based Comparison of Current Noise Analysis of Si BJT´s and SiGe HBT´s
Author :
Martín-Martínez, M.J. ; Pardo, D.
Author_Institution :
Universidad de Salamanca, Spain
fDate :
11-13 September 2000
Keywords :
Electrodes; Electromagnetic compatibility; Fluctuations; Germanium silicon alloys; Heterojunction bipolar transistors; Microscopy; Noise level; Noise reduction; Photonic band gap; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194736
