• DocumentCode
    1918167
  • Title

    Effect of Optical Excitation Energy on the MSM-PD Response

  • Author

    Averin, S.V. ; Kuznetzov, P.I. ; Alkeev, N.V. ; Sachot, R.

  • Author_Institution
    RAS, Moscow
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    926
  • Lastpage
    927
  • Abstract
    Effect of optical excitation energy on the MSM-detector performance is analyzed and discussed. The impulse response of GaN-based MSM-detector is favorably compared with GaAs MSM-device. We propose some guidelines for the design and optimization of MSM-detectors.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; metal-semiconductor-metal structures; photodetectors; wide band gap semiconductors; GaAs; GaN; MSM-PD response; MSM-detector; optical excitation energy effect; Aluminum gallium nitride; Gallium arsenide; Gallium nitride; Photonics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
  • Conference_Location
    Crimea
  • Print_ISBN
    978-966-335-012-7
  • Type

    conf

  • DOI
    10.1109/CRMICO.2007.4368788
  • Filename
    4368788
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1918167