Title :
A 85 Volt High Performance Silicon Complementary Bipolar Technology for High Voltage Analog Applications
Author :
Bashir, R. ; Chen, D. ; Hebert, F. ; DeSantis, J. ; Ramde, A. ; Hobrecht, S. ; You, H. ; Maghsoudnia, P. ; Meng, P. ; Razouk, R.R.
Author_Institution :
NATIONAL SEMICONDUCTOR CORPORATION, Santa Clara, CA. USA.
Abstract :
A high performance and low cost complementary bipolar technology has been developed for the realization of higlh-precision, hiigh-frequency, and high voltage analog circuits. The technology, referred to as VIP-3H (Vertically Integrated PNP-3H), offers polysilicon emitter transistors with BVceo of NPN and PNP transistors greater than 85 and 95 volts, respectively. The ft of the NPN is 2 GHz and for the PNP is 1.6 GHz. In addition, ß × Va figures of merit in excess of 60,000 V for NPN and 7,200 for PNP, respectively, are also obtained. The optimization of the critical breakdown voltages is presented and discussed.
Keywords :
Aluminum; Avalanche breakdown; Boron; Doping; Electric breakdown; Epitaxial layers; Integrated circuit technology; Isolation technology; Silicon; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
