Title :
Oxygen Precipitation in Cz-Si under Uniform Stress
Author :
Misiuk, A. ; Datsenko, L.I. ; Surma, B. ; Popov, V.P.
Author_Institution :
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa, Poland
Abstract :
Phenomena related to oxygen precipitation in Czochralski grown silicon subjected to hydrostatic pressure up to 2.5 GPa at ambient temperature and up to 1.35 GPa at 1230 - 1620K were investigated by FTIR, X-ray methods, chemical selective etching and TEM. Depending on the initial oxygen concentration and preannealing conditions, uniform stress influences markedly the oxygen - related defect structure of Cz-Si.
Keywords :
Annealing; Capacitive sensors; Electrons; Etching; Oxygen; Physics; Silicon; Temperature dependence; Thermal expansion; Thermal stresses;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
