Title :
Single Trap Profiling by Charge Pumping
Author :
Okhonin, S. ; Meyer, V. ; Ils, A. ; Fazan, P. ; Risch, L. ; Hoffman, F.
Author_Institution :
Swiss Federal Institute of Technology, Lausanne, Switzerland
fDate :
11-13 September 2000
Keywords :
Capacitance-voltage characteristics; Charge pumps; Current measurement; Electron traps; FETs; Leg; MOSFETs; Pulse measurements; Telegraphy; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194779
