Title :
Wide bandwidth traveling-wave InGaAsP/InP electroabsorption modulator for millimeter wave applications
Author :
Li, G.L. ; Pappert, S.A. ; Sun, C.K. ; Chang, W.S.C. ; Yu, P.K.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
Traveling wave electroabsorption modulators (TW-EAMs) can provide large modulation bandwidth and high efficiency features for both analog and digital fiber-optic links. Here, high efficiency TW-EAMs with modulation bandwidths in excess of 40 GHz have been demonstrated. Observing the predicted bandwidth reduction for counter-propagating optical and microwave fields along the waveguide has validated the traveling-wave nature of the modulator.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; microwave photonics; optical waveguide components; 40 GHz; InGaAsP-InP; counter-propagation; fiber-optic link; millimeter-wave communication; modulation bandwidth; modulation efficiency; traveling-wave InGaAsP/InP electroabsorption modulator; Bandwidth; Digital modulation; High speed optical techniques; Indium phosphide; Optical attenuators; Optical coupling; Optical design; Optical losses; Optical modulation; Optical waveguides;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966839
