DocumentCode :
1918821
Title :
Inverse Modelling of Trapped Charge in Hot-Carrier Stressed nMOSFET
Author :
Duane, R. ; Concannon, A. ; McCarthy, D. ; Mathewson, A.
Author_Institution :
National Microelectronics Research Centre, Cork, Ireland
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
368
Lastpage :
371
Keywords :
Charge pumps; Current measurement; Doping profiles; Hot carriers; Interface states; Inverse problems; MOSFET circuits; Numerical simulation; Semiconductor process modeling; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194791
Filename :
1503721
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1918821
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