Title :
A monolithic HEMT diode balanced mixer for 100-140 GHz
Author :
Morgan, M. ; Weinreb, S.
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Abstract :
We report the design and evaluation of a broadband, balanced mixer for 100-140 GHz using a HEMT MMIC process on a 75 /spl mu/m InP substrate. The circuit uses Schottky diodes as mixing elements. It demonstrates a conversion loss of 15 /spl plusmn/ 2 dB from 100-130 GHz with 5 dBm LO drive at 80 GHz, Measurements indicate a wide IF bandwidth extending beyond 50 GHz. This is the first demonstration of a monolithic HEMT diode balanced mixer in this frequency range.
Keywords :
HEMT integrated circuits; III-V semiconductors; Schottky diode mixers; field effect MIMIC; indium compounds; millimetre wave mixers; 100 to 140 GHz; 15 dB; 50 GHz; 75 micron; EHF; HEMT MMIC process; HEMT diode mixer; InP; InP substrate; MM-wave IC; Schottky diodes; broadband mixer; conversion loss; monolithic balanced mixer; wide IF bandwidth; Bandwidth; Circuits; Couplings; HEMTs; Indium phosphide; MMICs; Millimeter wave technology; Mixers; Radio frequency; Schottky diodes;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966848
