Title :
High-Voltage Drain Extended MOS Transistors for 0.18 um Logic CMOS Process
Author :
Mitros, J. ; Tsai, C.Y. ; Shichijo, H. ; Kunz, K. ; Morton, A. ; Goodpaster, D. ; Mosher, D. ; Efland, T.
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
fDate :
11-13 September 2000
Keywords :
Breakdown voltage; CMOS logic circuits; CMOS process; CMOS technology; Implants; Instruments; MOSFETs; Medical simulation; Production; Transistors;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194793
