DocumentCode :
1919436
Title :
An Analytical Hot-Carrier Degradation Model for LDD NMOSFETs
Author :
Goo, Jung-Suk ; Kim, Young-Gwan ; l´Yee, Hyeokjae ; Kwon, Ho-Yup ; Shin, Hyungsoon
Author_Institution :
Central R&D Laboratory, GoldStar Electron Co., Ltd., 16, Woomyeon, Seocho, Seoul, 137-140, KOREA
fYear :
1994
fDate :
11-15 Sept. 1994
Firstpage :
425
Lastpage :
428
Keywords :
Analytical models; Charge pumps; Degradation; Hot carriers; Implants; Interface states; MOSFET circuits; Predictive models; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
Print_ISBN :
0863321579
Type :
conf
Filename :
5435751
Link To Document :
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