Title :
The Differential SiGe-HBT
Author :
Schüppen, A. ; König, U. ; Gruhle, A. ; Kibbel, H. ; Erben, U.
Author_Institution :
Daimler-Benz AG, Research Center, Wilhelm-Runge-Str. 11, D-89081 Ulm, Germany
Abstract :
A new fabrication method for SiGe-HBTs is presented using molecular beam epitaxy (MBE) for growing the device layers on SiO2 patterned Si wafers. The epitaxial layers inside the SiO2 windows are monocrystalline. The polycrystalline Si and SiGe on top of the surrounding SiO2 is used for the base contact. This technique reduces the parasitic base-collector capacitances. The first differential SiGe-HBTs (DHBTs) show good DC-characteristics and cut-off frequencies fT of 65 GHz and fmax of 38 GHz.
Keywords :
Cutoff frequency; Double heterojunction bipolar transistors; Electron devices; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Parasitic capacitance; Silicon germanium; Wet etching;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
