Title :
Impact of nitridation of SiO2 gate oxide on 1/f noise in 0.18um CMOS
Author :
Rold, M. Da ; Simoen, E. ; Badenes, G. ; Decoutere, S.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
11-13 September 2000
Keywords :
Acoustical engineering; Boron; CMOS technology; Dielectrics; Implants; Lithography; MOS devices; Oxidation; Radio frequency; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194827
