Title :
P1–24: Photo-assisted electron emission from MOS-type cathode based on nanocrystalline silicon
Author :
Shimawaki, Hidetaka ; Neo, Yoichiro ; Mimura, Hidenori ; Wakaya, Fujio ; Takai, Mikio
Author_Institution :
Grad. Sch. of Eng., Hachinohe Inst. of Technol., Hachinohe, Japan
Abstract :
Enhancement of electron emission by illumination of a metal-oxide-semiconductor (MOS)-type cathode based on nanocrystalline silicon has been studied using a He-Ne laser. Heavily doped p-type silicon was used as a substrate and the laser was irradiated on the gate with oblique incidence. The emission current was enhanced under illumination and quickly responded to on-off of the laser. In addition, the threshold voltage for the electron emission decreased.
Keywords :
MIS devices; cathodes; gas lasers; helium; neon; photoemission; semiconductor diodes; He-Ne; He-Ne laser; MOS-type cathode; Si; metal-oxide-semiconductor-type cathode; nanocrystalline silicon; photo-assisted electron emission enhancement; threshold voltage; Cathodes; Electron emission; Lighting; Logic gates; Semiconductor diodes; Semiconductor lasers; Silicon; MOS cathode; nanocrystalline silicon; photo-assisted electron emission;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
DOI :
10.1109/IVNC.2010.5563172
