DocumentCode
1920147
Title
A New Delta-Doped Quantum-Well InGaAs-GaAs Resonant-Tunneling Switching Device
Author
Liu, Wen-Chau ; Guo, Dei-Feng ; Laih, Li H-Wen ; Yih, Shiuh-Ren ; Liang, Jing-Tong ; Lyuu, Gau-Ming
Author_Institution
Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan, Republic of China
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
551
Lastpage
554
Abstract
In this paper, a new switching device having a p-type delta-oped sheet, ¿(p+), in the center of an InGaAs-GaAs quantum well is presented. An N-shaped negative-differential -resistance (NDR) phenomenon resulting from the resonant tunneling effect through the miniband under a proper anode-to-cathode voltage is observed. From the experimental results, it is seen that the temperature plays an important role in the device performances.
Keywords
Chemical technology; Current density; Doping; Energy states; Metallic superlattices; Microwave devices; Microwave theory and techniques; Molecular beam epitaxial growth; Quantum well devices; Resonant tunneling devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435778
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