DocumentCode
1920294
Title
P1–18: I-V Characteristics of nanogap electrodes formed by thermally assisted electromigration
Author
Singh, Abhishek Kumar ; Rajput, Nitul Singh ; Banerjee, Amit ; Kulkarni, Vishwas N. ; Kumar, Jitendra
Author_Institution
Mater. Sci. Programme, Indian Inst. of Technol. Kanpur, Kanpur, India
fYear
2010
fDate
26-30 July 2010
Firstpage
64
Lastpage
64
Abstract
Electrodes with nano-scale gaps have been fabricated using metallic nano-wires, derived via milling of thin films with focused ion beam (FIB) and passing current ~1012A/m2. Their I-V characteristics measured at a pressure ~10-6 mbar are shown to follow Child-Langmuir law or Fowler-Nordheim field emission depending upon the gap.
Keywords
electrodes; electromigration; field emission; focused ion beam technology; milling; nanofabrication; nanowires; Child-Langmuir law; Fowler-Nordheim field emission; focused ion beam; metallic nanowires; nanogap electrodes; thermally assisted electromigration; thin films; Copper; Electrodes; Gold; Ion beams; Lithography; Nanowires; Voltage measurement; Electro-migration; Focused Ion Beam (FIB); Nano-electrodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location
Palo Alto, CA
Print_ISBN
978-1-4244-7889-7
Electronic_ISBN
978-1-4244-7888-0
Type
conf
DOI
10.1109/IVNC.2010.5563181
Filename
5563181
Link To Document