• DocumentCode
    1920547
  • Title

    9.2: Correlation between low threshold emission and C-N bond in nitrogen-doped diamond

  • Author

    Masuzawa, Tomoaki ; Kudo, Yuki ; Saito, Ichitaro ; Yamada, Takatoshi ; Okano, Ken

  • Author_Institution
    Dept. of Mater. Sci., Int. Christian Univ., Mitaka, Japan
  • fYear
    2010
  • fDate
    26-30 July 2010
  • Firstpage
    189
  • Lastpage
    190
  • Abstract
    Field emission properties of nitrogen(N)-doped diamond with different dopant concentrations were investigated. Time-of-flight secondary ion mass spectroscopy measurement on the diamond samples showed a correlation between threshold field and the intensity of carbon(C)-nitrogen(N). This suggests that the N incorporation in the form of C-N, may be responsible for the extremely low threshold emission from heavily N-doped diamond.
  • Keywords
    field emission; mass spectroscopy; time of flight spectroscopy; C-N bond; dopant concentrations; nitrogen-doped diamond; threshold emission; time-of-flight secondary ion mass spectroscopy; Correlation; Diamond-like carbon; Electron emission; Mass spectroscopy; Nitrogen; Threshold voltage; Diamond; Field Emission; Nitrogen Doped; SIMS;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
  • Conference_Location
    Palo Alto, CA
  • Print_ISBN
    978-1-4244-7889-7
  • Electronic_ISBN
    978-1-4244-7888-0
  • Type

    conf

  • DOI
    10.1109/IVNC.2010.5563192
  • Filename
    5563192
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1920547