Title :
Characterization of Transient Effects in the S-Parameters of GaAs MESFETs by Means of Pulsed Measurements
Author :
Begin, M. ; Ghannouchi, F.M. ; Beauregard, F. ; Selmi, L. ; Riccò, B. ; Borelli, V.
Author_Institution :
Microwave Research Lab. Ecole Politechnique de Montréal, P.O.Box 6079, Montréal, Canada, H3C 3A7
Abstract :
This paper presents a characterization of the main transient phenomena affecting the S-parameters of GaAs MESFETs, carried out by means of an innovative Six Port Network Analyzer operated in burst mode. The results, interpreted using established models of the small signal MESFET behavior, indicate that the transient effects observed in the S-parameters must be attributed to changes in the device transconductance and output conductance, while minor anomalies affect the input, output and feedback capacitance.
Keywords :
Diodes; Frequency measurement; Gallium arsenide; MESFETs; Oscilloscopes; Pulse measurements; Scattering parameters; Time measurement; Transient analysis; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
