• DocumentCode
    1920559
  • Title

    Characterization of Transient Effects in the S-Parameters of GaAs MESFETs by Means of Pulsed Measurements

  • Author

    Begin, M. ; Ghannouchi, F.M. ; Beauregard, F. ; Selmi, L. ; Riccò, B. ; Borelli, V.

  • Author_Institution
    Microwave Research Lab. Ecole Politechnique de Montréal, P.O.Box 6079, Montréal, Canada, H3C 3A7
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    639
  • Lastpage
    642
  • Abstract
    This paper presents a characterization of the main transient phenomena affecting the S-parameters of GaAs MESFETs, carried out by means of an innovative Six Port Network Analyzer operated in burst mode. The results, interpreted using established models of the small signal MESFET behavior, indicate that the transient effects observed in the S-parameters must be attributed to changes in the device transconductance and output conductance, while minor anomalies affect the input, output and feedback capacitance.
  • Keywords
    Diodes; Frequency measurement; Gallium arsenide; MESFETs; Oscilloscopes; Pulse measurements; Scattering parameters; Time measurement; Transient analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1920559