Title :
Far Infrared Detectors using p-Si1-xGex/Si Multiple Quantum Wells
Author :
Robbins, D.J. ; Stanaway, M B ; Millidge, S. ; Leong, W.Y. ; Glasper, J L
Author_Institution :
Defence Research Agency, St Andrews Road, Malvern, WR14 3PS, UK.
Abstract :
The first systematic study of p-Si1-xGex/Si multiple quantum well infrared detectors (QWIPs) grown by low pressure vapour phase epitaxy (LPVPE) is described. The inclusion of undoped Si1-xGex spacer layers adjacent to the p-doped alloy reduces the weakly temperature-dependent ``tunnelling´´ component of the dark current. The peak wavelength in the photoresponse spectrum is tuned between 7.2-10.2¿m by changing the Ge fraction, x, in the range between 0.15 alnd 0.08.
Keywords :
Dark current; Epitaxial growth; III-V semiconductor materials; Infrared detectors; Integrated circuit technology; Optical attenuators; Phase detection; Sensor arrays; Temperature; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
