Title :
Investigation on the Kink Effect in Poly-TFTs
Author :
Valdinoci, M. ; Colalongo, L. ; Baccarani, G. ; Fortunato, G. ; Pécora, A. ; Policicchio, I.
Author_Institution :
DEIS, Universit? di Bologna, viale Risorgimento 2, 40136 Bologna, Italy
Abstract :
Similarly to c-Si SOI devices, in the output characteristics of poly-TFTs at high drain voltages a rapid increase of the drain current occurs. In this paper we investigate the nature of this current increase and show that it can be explained by the action of a parasitic bipolar transistor in the back-channel region, which enhances the effect of impact ionization occurring at the drain junction.
Keywords :
Bipolar transistors; Character generation; Displays; Grain boundaries; Impact ionization; Impedance; Numerical simulation; Silicon; Thin film transistors; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
