Title :
2.3: Field emission in air between iridium-iridium oxide diode tips
Author :
Brimley, Scott ; Miller, Mark S. ; Hagmann, Mark
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Utah, Salt Lake City, UT, USA
Abstract :
We report on the fabrication and field emission properties of lithographic iridium-iridium oxide diodes operating in air, with gaps around 100 nm. Field emission currents of up to 1 μA were found, with signatures of Fowler-Nordhiem tunneling, space-charge limited emission, and possibly charging of the underlying oxide. Post field emission imaging showed surprisingly modest levels of damage, despite biases of around 200 V applied.
Keywords :
field emission; iridium compounds; lithography; semiconductor diodes; space charge; tunnelling; Fowler-Nordhiem tunneling; lithographic iridium-iridium oxide diodes; post field emission imaging; space-charge limited emission; Aluminum; Current measurement; Fabrication; Iron; Light emitting diodes; Optical buffering; Semiconductor device measurement; field-emission in air; iridium oxide lithography;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
DOI :
10.1109/IVNC.2010.5563224
